| No. |
Part Name |
Description |
Manufacturer |
| 511 |
MSC81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 512 |
MU4891 |
Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits |
Motorola |
| 513 |
MU4892 |
Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits |
Motorola |
| 514 |
MU4893 |
Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits |
Motorola |
| 515 |
MU4894 |
Silicon annular plastic unijunction transistor designed for military and industrial use in pulse, timing, triggering, sensing and oscillator circuits |
Motorola |
| 516 |
NTE3031 |
Phototransistor Detector NPN-Si, Visible & IR |
NTE Electronics |
| 517 |
NTE3032 |
Phototransistor Detector NPN-Si, Visible & IR |
NTE Electronics |
| 518 |
NTE3034A |
Phototransistor Detector |
NTE Electronics |
| 519 |
NTE3035 |
Phototransistor Detector |
NTE Electronics |
| 520 |
NTE3035A |
Phototransistor Detector |
NTE Electronics |
| 521 |
NTE3037 |
Silicon NPN Phototransistor Detector |
NTE Electronics |
| 522 |
NTE3120 |
Silicon NPN Phototransistor Detector |
NTE Electronics |
| 523 |
NTE335 |
Silicon NPN RF Power Transistor Designed for power amplifier |
NTE Electronics |
| 524 |
NTE336 |
Silicon NPN RF Power Transistor Designed for power amplifier |
NTE Electronics |
| 525 |
RCA-40953 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
| 526 |
RCA-40954 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
| 527 |
RCA-40955 |
156MHz Silicon NPN Overlay RF Transistor designed for VHF marine transmitters |
RCA Solid State |
| 528 |
RF TRANSISTOR DESIGN |
Chip fabrication, basic operation and main parameters, noise, parasitic elements, packaging |
SGS-ATES |
| 529 |
SD1014-02 |
NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W |
SGS Thomson Microelectronics |
| 530 |
SD1143-01 |
12.5V Class C 10W epitaxial silicon NPN planar transistor designed primarly for VHF communications |
SGS Thomson Microelectronics |
| 531 |
SD1274-1 |
175MHz 12.5V 30W NPN RF Transistor designed primarily for VHF communications |
SGS Thomson Microelectronics |
| 532 |
SD1400-02 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
| 533 |
SD1400-03 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range |
SGS Thomson Microelectronics |
| 534 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
| 535 |
SD1429-03 |
15W 12.5V Class C NPN RF transistor designed for UHF communications |
SGS Thomson Microelectronics |
| 536 |
SD1451 |
30MHz 12.5V 60W NPN HF Transistor designed primarily for SSB communications |
SGS Thomson Microelectronics |
| 537 |
SD1495 |
870MHzz 24V 35W Class C transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
| 538 |
SD1495-03 |
24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz |
SGS Thomson Microelectronics |
| 539 |
SD1500 |
NPN Planar Pulsed Transistor designed for use in L BAND radar applications |
SGS Thomson Microelectronics |
| 540 |
SD1501 |
1.2-1.4GHz 30W 35V RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
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