| No. |
Part Name |
Description |
Manufacturer |
| 511 |
2N1683 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 512 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 513 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 514 |
2N1754 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 515 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
| 516 |
2N1924 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 517 |
2N1925 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 518 |
2N1926 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 519 |
2N2048 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 520 |
2N2048A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 521 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 522 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 523 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 524 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 525 |
2N2168 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 526 |
2N2169 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 527 |
2N2170 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 528 |
2N2171 |
PNP germanium transistor for small-signal audio amplifiers, Class B push-pull output stages and medium-speed switching circuits |
Motorola |
| 529 |
2N2193 |
Silicon NPN planar epitaxial transistor for high speed switchings and RF amplifiers |
AEG-TELEFUNKEN |
| 530 |
2N2195 |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
| 531 |
2N2195A |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
| 532 |
2N2195B |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
| 533 |
2N2205 |
Transistor, high speed saturated switches |
SGS-ATES |
| 534 |
2N2217 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 535 |
2N2218 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
| 536 |
2N2218 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2904 PNP complementary |
Motorola |
| 537 |
2N2218 |
HIGH-SPEED SWITCHES |
SGS Thomson Microelectronics |
| 538 |
2N2218 |
HIGH-SPEED SWITCHES |
SGS Thomson Microelectronics |
| 539 |
2N2218 |
Transistor, high speed saturated switches |
SGS-ATES |
| 540 |
2N2218 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| | | |
