| No. |
Part Name |
Description |
Manufacturer |
| 511 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 512 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 513 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 514 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 515 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 516 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 517 |
1738U |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 518 |
1738UAA |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 519 |
1738UBA |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 520 |
1738UCA |
Small form-ractor erbium-doped fiber amplifier with uncooled pump. Connector FC/APC. Electrical connection: male 2 x 10 at 2 mm spacing. |
Agere Systems |
| 521 |
1738UCA |
Small form-ractor erbium-doped fiber amplifier with uncooled pump. Connector FC/APC. Electrical connection: male 2 x 10 at 2 mm spacing. |
Agere Systems |
| 522 |
17T4 |
Thiristor - normal series |
SESCOSEM |
| 523 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 524 |
181T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 525 |
182T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 526 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 527 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 528 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 529 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 530 |
183T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 531 |
184T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 532 |
184T2 |
Power NPN transistor - High Voltage |
SESCOSEM |
| 533 |
185T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
| 534 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 535 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 536 |
1989-XX |
Tanfilm DIP Resistor Networks |
International Resistive |
| 537 |
1DF0D10 |
Low Dissipation Factor Disc Capacitors |
Vishay |
| 538 |
1DF0D12 |
Low Dissipation Factor Disc Capacitors |
Vishay |
| 539 |
1DF0D15 |
Low Dissipation Factor Disc Capacitors |
Vishay |
| 540 |
1DF0D18 |
Low Dissipation Factor Disc Capacitors |
Vishay |
| | | |
