| No. |
Part Name |
Description |
Manufacturer |
| 511 |
173-14 |
Midget flanged base lens-end lamp. 3.50V, 0.600A, 12000Lux. |
Gilway Technical Lamp |
| 512 |
174-14 |
Midget flanged base lens-end lamp. 5.00V, 0.170A, 880Lux. |
Gilway Technical Lamp |
| 513 |
179-14 |
Midget flanged base lens-end lamp. 3.50V, 0.750A, 13000Lux. |
Gilway Technical Lamp |
| 514 |
180-14 |
Midget flanged base lens-end lamp. 2.50V, 0.350A, 2100Lux. |
Gilway Technical Lamp |
| 515 |
181 |
Unbased lamp. 5.0V, 0.780A. |
Gilway Technical Lamp |
| 516 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
| 517 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 518 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 519 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 520 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 521 |
187 |
Subminiature krypton lamp with clear-end. 4.2V, 1.05A, 50 lumens. |
Gilway Technical Lamp |
| 522 |
188 |
Subminiature krypton lamp with clear-end. 5.0V, 1.00A, 42 lumens. |
Gilway Technical Lamp |
| 523 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 524 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 525 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 526 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 527 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 528 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 529 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 530 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 531 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 532 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 533 |
1AS027 |
Silicon rectifier with avalanche character 1.5A 800V, approved under CV7645 for MIL applications |
Texas Instruments |
| 534 |
1AS029 |
Silicon rectifier with avalanche character 1.5A 1000V, approved under CV7645 for MIL applications |
Texas Instruments |
| 535 |
1M110Z |
110 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 536 |
1M120Z |
120 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 537 |
1M130Z |
130 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 538 |
1M150Z |
150 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 539 |
1M160Z |
160 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 540 |
1M180Z |
180 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
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