| No. |
Part Name |
Description |
Manufacturer |
| 5131 |
2SC828 |
Transistor - JEIDA Series |
National Semiconductor |
| 5132 |
2SC828 |
Audio Frequency Small Signal Transistors |
Semiconductor Technology |
| 5133 |
2SC828A |
Si NPN Epitaxial Planar |
Unknow |
| 5134 |
2SC829 |
Transistor - JEIDA Series |
National Semiconductor |
| 5135 |
2SC829 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 5136 |
2SC830 |
Silicon NPN Triple Diffused Transistor, intended for use in HiFi Amp. Power Output |
Hitachi Semiconductor |
| 5137 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 5138 |
2SC838 |
FM RADIO AMP/ MIX CONV/ OSC IF AMP |
Etron Tech |
| 5139 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 5140 |
2SC839 |
FM/AM RADIO RF AMP,CONV,OSC,IF AMP |
USHA India LTD |
| 5141 |
2SC853 |
NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 5142 |
2SC856 |
Silicon NPN Triple Diffused LTP Transistor, intended for use in Video Power Output |
Hitachi Semiconductor |
| 5143 |
2SC857H |
Silicon NPN Triple Diffused LTP Transistor, intended for use in High Voltage Switching |
Hitachi Semiconductor |
| 5144 |
2SC863 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 5145 |
2SC864 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 5146 |
2SC867 |
Silicon NPN Power Transistors TO-66 package |
Savantic |
| 5147 |
2SC892 |
NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 5148 |
2SC897 |
Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output |
Hitachi Semiconductor |
| 5149 |
2SC898 |
Silicon NPN Triple Diffused Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 5150 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 5151 |
2SC900 |
LOW FREQUENCY, LOW NOISE AMPLIFIER |
USHA India LTD |
| 5152 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 5153 |
2SC9013 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION |
USHA India LTD |
| 5154 |
2SC9014 |
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE |
USHA India LTD |
| 5155 |
2SC9016 |
Transistors |
USHA India LTD |
| 5156 |
2SC9018 |
AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER |
USHA India LTD |
| 5157 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 5158 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 5159 |
2SC908 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 5160 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
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