| No. |
Part Name |
Description |
Manufacturer |
| 5131 |
MCH6604 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5132 |
MCH6605 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5133 |
MCH6606 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5134 |
MCH6607 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5135 |
MCH6608 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5136 |
MCH6609 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5137 |
MCH6610 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5138 |
MCH6611 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5139 |
MCH6612 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5140 |
MCH6613 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5141 |
MCH6614 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5142 |
MCH6615 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5143 |
MCH6616 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 5144 |
MCL4148 |
High-speed switching diode |
Formosa MS |
| 5145 |
MCL4448 |
100 V, high-speed switching diode |
Formosa MS |
| 5146 |
MD1126 |
NPN silicon annular dual high-speed switching transistor |
Motorola |
| 5147 |
MD1127 |
NPN silicon annular dual high-speed switching transistor |
Motorola |
| 5148 |
MD1128 |
NPN silicon annular dual high-speed switching transistor |
Motorola |
| 5149 |
MD1134 |
NPN silicon annular dual transistor for high-speed switching applications |
Motorola |
| 5150 |
MD3133 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 5151 |
MD3133F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 5152 |
MD3134 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 5153 |
MD3134F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 5154 |
MF3304 |
PNP silicon epitaxial transistor designed for low-level, high-speed switching applications |
Motorola |
| 5155 |
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 5156 |
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 5157 |
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 5158 |
MG300Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 5159 |
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 5160 |
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
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