| No. |
Part Name |
Description |
Manufacturer |
| 5161 |
TC913A |
The TC913 is a monolithic, auto-zeroed operational amplifier. Elimination of the external capacitors allows the designer to increase reliability, lower cost,and simplify design by lowering parts count. Since the TC913 is an auto-zeroing op |
Microchip |
| 5162 |
TC913A |
The TC913 is a monolithic, auto-zeroed operational amplifier. Elimination of the external capacitors allows the designer to increase reliability, lower cost,and simplify design by lowering parts count. Since the TC913 is an auto-zeroing op |
Microchip |
| 5163 |
TC913B |
The TC913 is a monolithic, auto-zeroed operational amplifier. Elimination of the external capacitors allows the designer to increase reliability, lower cost,and simplify design by lowering parts count. Since the TC913 is an auto-zeroing op |
Microchip |
| 5164 |
TC913B |
The TC913 is a monolithic, auto-zeroed operational amplifier. Elimination of the external capacitors allows the designer to increase reliability, lower cost,and simplify design by lowering parts count. Since the TC913 is an auto-zeroing op |
Microchip |
| 5165 |
TC962 |
The TC962 is an advanced version of the industry-standard 7662 high-voltage DC-to-DC converter. Using improved design techniques and CMOS construction, the TC962 can source as much as 80mA versus the 7662 ’s 20mA capability. As an in |
Microchip |
| 5166 |
TCC1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 5167 |
TCC20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 5168 |
TCC20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 5169 |
TCC2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 5170 |
TCC2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 5171 |
TCC2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 5172 |
TCC2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 5173 |
TCC2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 5174 |
TCD2905D |
The TCD2905D is a high sensitive and low dark current 5400 elements � 6 line CCD color image sensor which includes CCD drive circuit and clamp circuit. The sensor is designed for scanner. |
TOSHIBA |
| 5175 |
TCD2950D |
The TCD2950D is a high sensitive and low dark current 10680 elements � 6 line CCD color image sensor which includes CCD drive circuit and clamp circuit. The sensor is designed for scanner. |
TOSHIBA |
| 5176 |
TCM809 |
The TCM809 and TCM810 are cost-effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. The reset output is driven |
Microchip |
| 5177 |
TCM810 |
The TCM809 and TCM810 are cost-effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. No external components are required. The reset output is driven |
Microchip |
| 5178 |
TCM811 |
The TCM811 and TCM812 are cost-effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. A manual reset input is provided to override the reset monitor, |
Microchip |
| 5179 |
TCM812 |
The TCM811 and TCM812 are cost-effective system supervisor circuits designed to monitor VCC in digital systems and provide a reset signal to the host processor when necessary. A manual reset input is provided to override the reset monitor, |
Microchip |
| 5180 |
TDA16847 |
Power Control ICs - Off-line PWM controller with enhanced design flexibilities as required e.g. in VCR power supplies |
Infineon |
| 5181 |
TDK73M9001/UCJ |
DAA Micromodule Designer's Guide |
Silicon Systems |
| 5182 |
TDK73M9002 |
Superintendent DAA Micromodule Designer's Guide |
Silicon Systems |
| 5183 |
TIP120 |
. . . designed for general-purpose amplifier and low-speed switching applications. |
ON Semiconductor |
| 5184 |
TIP121 |
. . . designed for general-purpose amplifier and low-speed switching applications. |
ON Semiconductor |
| 5185 |
TIP121 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 5186 |
TIP122 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 5187 |
TIP125 |
. . . designed for general-purpose amplifier and low-speed switching applications. |
ON Semiconductor |
| 5188 |
TIP126 |
. . . designed for general-purpose amplifier and low-speed switching applications. |
ON Semiconductor |
| 5189 |
TIP127 |
PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 5190 |
TIP2955 |
PNP silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vdc, Ic = 15Adc, PD = 90W. |
USHA India LTD |
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