| No. |
Part Name |
Description |
Manufacturer |
| 5161 |
MJE700 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5162 |
MJE701 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5163 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5164 |
MJE703 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5165 |
MJE800 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5166 |
MJE801 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5167 |
MJE802 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5168 |
MJE803 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5169 |
MM2483 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 5170 |
MM2484 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 5171 |
MM3000 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V |
Motorola |
| 5172 |
MM3001 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V |
Motorola |
| 5173 |
MM3002 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V |
Motorola |
| 5174 |
MM3003 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V |
Motorola |
| 5175 |
MMBD4148 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 5176 |
MMBD914 |
350mW 100 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 5177 |
MMBV109 |
Silicon Epicap Diode |
Leshan Radio Company |
| 5178 |
MMBV109L |
Silicon Epicap Diodes |
ON Semiconductor |
| 5179 |
MMBV109LT1 |
Silicon Epicap Diode |
Leshan Radio Company |
| 5180 |
MMBV109LT1 |
Silicon Epicap Diodes |
ON Semiconductor |
| 5181 |
MMBV109LT3 |
Silicon Epicap Diodes |
ON Semiconductor |
| 5182 |
MMC4048 |
Multifunction expandable 8-Input Gate |
Microelectronica |
| 5183 |
MMC4048 |
Multifunction expandable 8-input gate (3-state out) (in Romanian) |
Microelectronica |
| 5184 |
MMC4048 |
Multifunction expandable 8-input gate (3-state out) |
Microelectronica |
| 5185 |
MMC4048E |
Multifunction expandable 8-Input Gate |
Microelectronica |
| 5186 |
MMC4048F |
Multifunction expandable 8-Input Gate |
Microelectronica |
| 5187 |
MMC4048G |
Multifunction expandable 8-Input Gate |
Microelectronica |
| 5188 |
MMC4048H |
Multifunction expandable 8-Input Gate |
Microelectronica |
| 5189 |
MMD6050 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 5190 |
MMD6100 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
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