| No. |
Part Name |
Description |
Manufacturer |
| 5161 |
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 5162 |
GT25J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 5163 |
GT25J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 5164 |
GT25Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 5165 |
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 5166 |
GT25Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 5167 |
GT30J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 5168 |
GT30J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 5169 |
GT30J122 |
Discrete IGBT |
TOSHIBA |
| 5170 |
GT30J122A |
IGBT for soft switching applications |
TOSHIBA |
| 5171 |
GT30J126 |
Discrete IGBT |
TOSHIBA |
| 5172 |
GT30J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 5173 |
GT30J311 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 5174 |
GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 5175 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 5176 |
GT30J341 |
Discrete IGBT |
TOSHIBA |
| 5177 |
GT35J321 |
IGBT for soft switching applications |
TOSHIBA |
| 5178 |
GT35MR21 |
IGBT for soft switching applications |
TOSHIBA |
| 5179 |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 5180 |
GT40J121 |
IGBT for soft switching applications |
TOSHIBA |
| 5181 |
GT40J321 |
IGBT for soft switching applications |
TOSHIBA |
| 5182 |
GT40J322 |
IGBT for soft switching applications |
TOSHIBA |
| 5183 |
GT40J325 |
IGBT for soft switching applications |
TOSHIBA |
| 5184 |
GT40M101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 5185 |
GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 5186 |
GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 5187 |
GT40Q322 |
Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 5188 |
GT40QR21 |
IGBT for soft switching applications |
TOSHIBA |
| 5189 |
GT40RR21 |
IGBT for soft switching applications |
TOSHIBA |
| 5190 |
GT40T101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
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