| No. |
Part Name |
Description |
Manufacturer |
| 5191 |
NTE578 |
Silicon Rectifier Schottky Barrier, General Purpose |
NTE Electronics |
| 5192 |
NTE585 |
Silicon Rectifier Diode Schottky Barrier, Fast Switching |
NTE Electronics |
| 5193 |
NTE586 |
Silicon Rectifier Diode Schottky Barrier, Fast Switching |
NTE Electronics |
| 5194 |
NTE6080 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 5195 |
NTE6081 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 5196 |
NTE6082 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 5197 |
NTE6083 |
Schottky Barrier Rectifier |
NTE Electronics |
| 5198 |
NTE6084 |
Silicon Rectifier Schottky Barrier |
NTE Electronics |
| 5199 |
NTE6087 |
Schottky Barrier Silicon Rectifier |
NTE Electronics |
| 5200 |
NTE6091 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 5201 |
NTE6092 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 5202 |
NTE6093 |
Silicon Rectifier Dual, Schottky Barrier |
NTE Electronics |
| 5203 |
NTE6094 |
Silicon Rectifier Schottky Barrier |
NTE Electronics |
| 5204 |
NTE6248 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 5205 |
NTGD3147F |
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
ON Semiconductor |
| 5206 |
NTGD4169F |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 |
ON Semiconductor |
| 5207 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
| 5208 |
NTHD3133PF |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 5209 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 5210 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 5211 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 5212 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 5213 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 5214 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 5215 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
| 5216 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
| 5217 |
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode |
ON Semiconductor |
| 5218 |
NTLUF4189NZ |
Single N-Channel 30 V MOSFET plus Schottky Barrier Diode |
ON Semiconductor |
| 5219 |
NUR30Q |
Quad Schottky Barrier Diodes Array |
ON Semiconductor |
| 5220 |
NUR30QW5T1 |
Quad Schottky Barrier Diodes Array |
ON Semiconductor |
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