| No. |
Part Name |
Description |
Manufacturer |
| 5191 |
20KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5192 |
20KW232 |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5193 |
20KW232A |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5194 |
20KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5195 |
20KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5196 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5197 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5198 |
20KW280 |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5199 |
20KW280A |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5200 |
20KW300 |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5201 |
20KW300A |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 5202 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 5203 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 5204 |
20PMT03 |
10/100 Base TX Transformer Designed for general Chipsets |
YCL |
| 5205 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 5206 |
2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
| 5207 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 5208 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 5209 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 5210 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 5211 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 5212 |
2223-9A |
9 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 5213 |
2224-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
| 5214 |
2225-4L |
3.5 W, 24 V, 2200-2500 MHz common base transistor |
GHz Technology |
| 5215 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 5216 |
2304 |
4 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
| 5217 |
2304 |
2.3GHz 4W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 5218 |
2307 |
7 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
| 5219 |
2324-12L |
12 W, 20 V, 2300-2400 MHz common base transistor |
GHz Technology |
| 5220 |
2324-20 |
20 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
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