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Datasheets found :: 6111
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No. Part Name Description Manufacturer
5191 T74H53 Exp. 2-2-2-3 input AND-OR-INVERT gate SGS-ATES
5192 T74H54 Dual 2-wide 2-input AND-OR-INVERT gate SGS-ATES
5193 T74H54 Dual 2-wide 2-input AND-OR-INVERT gate SGS-ATES
5194 TA8316AS IGBT GATE DRIVER TOSHIBA
5195 TC1055-2.5VCT 100mA CMOS LDO with shutdown and error output (it can be used as a low battery detector, or processor reset generator). Output voltage 2.5 V. TelCom Semiconductor
5196 TC1055-2.7VCT 100mA CMOS LDO with shutdown and error output (it can be used as a low battery detector, or processor reset generator). Output voltage 2.7 V. TelCom Semiconductor
5197 TC1055-3.0VCT 100mA CMOS LDO with shutdown and error output (it can be used as a low battery detector, or processor reset generator). Output voltage 3.0 V. TelCom Semiconductor
5198 TC1055-3.3VCT 100mA CMOS LDO with shutdown and error output (it can be used as a low battery detector, or processor reset generator). Output voltage 3.3 V. TelCom Semiconductor
5199 TC1055-5.0VCT 100mA CMOS LDO with shutdown and error output (it can be used as a low battery detector, or processor reset generator). Output voltage 5.0 V. TelCom Semiconductor
5200 TC1073-2.5VCH 50mA CMOS LDO with shutdown, error output (it can be used as a low battery detector, or processor reset generator) and Vref bypass. Output voltage 2.7 V. TelCom Semiconductor
5201 TC1073-2.7VCH 50mA CMOS LDO with shutdown, error output (it can be used as a low battery detector, or processor reset generator) and Vref bypass. Output voltage 2.7 V. TelCom Semiconductor
5202 TC1073-3.0VCH 50mA CMOS LDO with shutdown, error output (it can be used as a low battery detector, or processor reset generator) and Vref bypass. Output voltage 3.0 V. TelCom Semiconductor
5203 TC1073-3.3VCH 50mA CMOS LDO with shutdown, error output (it can be used as a low battery detector, or processor reset generator) and Vref bypass. Output voltage 3.3 V. TelCom Semiconductor
5204 TC1073-5.0VCH 50mA CMOS LDO with shutdown, error output (it can be used as a low battery detector, or processor reset generator) and Vref bypass. Output voltage 5.0 V. TelCom Semiconductor
5205 TC2201 Plastic Packaged Low Noise PHEMT GaAs FETs TRANSCOM
5206 TC2696 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs TRANSCOM
5207 TC3889 5W Packaged Self-Bias PHEMT GaAs Power FETs TRANSCOM
5208 TC3967 2W Packaged Self-Bias PHEMT GaAs Power FETs TRANSCOM
5209 TC429 The TC429 is a high-speed,single CMOS-level translator and driver.Designed specifically to drive highly capacitive power MOSFET gates,the TC429 features 2.5 Ω output impedance and 6A peak output current drive. A 2500pF capacitive loa Microchip
5210 TC429CPA The TC429 is a high-speed,single CMOS-level translator and driver.Designed specifically to drive highly capacitive power MOSFET gates,the ... Microchip
5211 TC429EOA The TC429 is a high-speed,single CMOS-level translator and driver.Designed specifically to drive highly capacitive power MOSFET gates,the ... Microchip
5212 TC429EOA713 The TC429 is a high-speed,single CMOS-level translator and driver.Designed specifically to drive highly capacitive power MOSFET gates,the ... Microchip
5213 TC429EPA The TC429 is a high-speed,single CMOS-level translator and driver.Designed specifically to drive highly capacitive power MOSFET gates,the ... Microchip
5214 TC429MJA The TC429 is a high-speed,single CMOS-level translator and driver.Designed specifically to drive highly capacitive power MOSFET gates,the ... Microchip
5215 TC514100AJ-10 100 ns, 1-bit generation dynamic RAM TOSHIBA
5216 TC514100AJ-60 60 ns, 1-bit generation dynamic RAM TOSHIBA
5217 TC514100AJ-70 70 ns, 1-bit generation dynamic RAM TOSHIBA
5218 TC514100AJ-80 80 ns, 1-bit generation dynamic RAM TOSHIBA
5219 TC514100AJL-60 60 ns, 1-bit generation dynamic RAM TOSHIBA
5220 TC514100AP-10 100 ns, 1-bit generation dynamic RAM TOSHIBA


Datasheets found :: 6111
Page: | 170 | 171 | 172 | 173 | 174 | 175 | 176 | 177 | 178 |



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