No. |
Part Name |
Description |
Manufacturer |
5191 |
MAX6736XKSVD3-T |
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5192 |
MAX6736XKSYD3-T |
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5193 |
MAX6736XKTED3-T |
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5194 |
MAX6736XKTGD3-T |
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5195 |
MAX6736XKTID3-T |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5196 |
MAX6736XKTWD3-T |
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5197 |
MAX6736XKTZD3-T |
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5198 |
MAX6736XKVDD3-T |
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5199 |
MAX6736XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5200 |
MAX6736XKVHD3-T |
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5201 |
MAX6736XKVRD3-T |
Vcc1: 1.575 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5202 |
MAX6736XKWED3-T |
Vcc1: 1.665 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5203 |
MAX6736XKWGD3-T |
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5204 |
MAX6736XKWID3-T |
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5205 |
MAX6736XKWTD3-T |
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5206 |
MAX6736XKYDD3-T |
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5207 |
MAX6736XKYFD3-T |
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5208 |
MAX6736XKYHD3-T |
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5209 |
MAX6736XKYVD3-T |
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5210 |
MAX6736XKZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5211 |
MAX6736XKZGD3-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5212 |
MAX6736XKZID3-T |
Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5213 |
MAX6736XKZWD3-T |
Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5214 |
MAX6737XKLTD3-T |
Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5215 |
MAX6737XKMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5216 |
MAX6737XKMSD3-T |
Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5217 |
MAX6737XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5218 |
MAX6737XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5219 |
MAX6737XKRHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
5220 |
MAX6737XKRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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