| No. |
Part Name |
Description |
Manufacturer |
| 5221 |
T700N2600 |
700 AMPS 2600V THYRISTOR |
IPRS Baneasa |
| 5222 |
TA8800N |
PLL PIF/SIF IC FOR TV/VTR |
TOSHIBA |
| 5223 |
TAA500N |
Luminance combination for color television receivers |
Siemens |
| 5224 |
TBA500N |
Luminance combination (with actual value going negative) |
Siemens |
| 5225 |
TBA500N |
LIGHTNESS COMBINATIONS |
VALVO |
| 5226 |
TC51832F-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 5227 |
TC51832FL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 5228 |
TC51832P-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 5229 |
TC51832PL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 5230 |
TC51832SP-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 5231 |
TC51832SPL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 5232 |
TC528128BJ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 5233 |
TC528128BZ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 5234 |
TC54256AF |
32768 word x 8-bit CMOC one time programmable read only memory, 200ns |
TOSHIBA |
| 5235 |
TC54256AP |
32768 word x 8-bit CMOC one time programmable read only memory, 200ns |
TOSHIBA |
| 5236 |
TC5517CF-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 5237 |
TC5517CFL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 5238 |
TC5517CP-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 5239 |
TC5517CPL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 5240 |
TC55257BSPL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| 5241 |
TC55257BTRL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
| 5242 |
TC554001FI-10L |
524, 288 words x 8 bit static RAM, access time 100ns |
TOSHIBA |
| 5243 |
TC554001FL-10V |
524, 288 words x 8 bit static RAM, access time 100ns |
TOSHIBA |
| 5244 |
TC554001FTI-10L |
524, 288 words x 8 bit static RAM, access time 100ns |
TOSHIBA |
| 5245 |
TC554001FTL-10V |
524, 288 words x 8 bit static RAM, access time 100ns |
TOSHIBA |
| 5246 |
TC554161FTL-10 |
262, 144-word by 16 bit static RAM, access time 100ns |
TOSHIBA |
| 5247 |
TC55V1001FTI-10 |
131,072-word by 8 bit static RAM, access time 100ns |
TOSHIBA |
| 5248 |
TC55V2001TRI-10 |
262,144-word by 8 bit static RAM, access time 100ns |
TOSHIBA |
| 5249 |
TC55V2001TRI-10L |
262,144-word by 8 bit static RAM, access time 100ns |
TOSHIBA |
| 5250 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
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