| No. |
Part Name |
Description |
Manufacturer |
| 5221 |
MTP6N60E |
Power Field Effect Transistor |
ON Semiconductor |
| 5222 |
MTP6N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5223 |
MTP8N50E |
Power Field Effect Transistor |
ON Semiconductor |
| 5224 |
MTP8N50E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5225 |
MTP8P08 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5226 |
MTP8P10 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5227 |
MTP9N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5228 |
MTSF3203R2 |
TMOS single P-channel field effect transistor |
Motorola |
| 5229 |
MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5230 |
MTV16N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 5231 |
MTV20N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 5232 |
MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 5233 |
MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 5234 |
MTV32N25E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 5235 |
MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate |
ON Semiconductor |
| 5236 |
MTW4N80 |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
| 5237 |
MTW4N80E |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
| 5238 |
MTW6N60E |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
Motorola |
| 5239 |
MTW8N50E |
TMOS E FET POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 5240 |
MTY14N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate |
ON Semiconductor |
| 5241 |
MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor |
ON Semiconductor |
| 5242 |
MW6S010 |
RF Power Field Effect Transistor |
Freescale (Motorola) |
| 5243 |
MW6S010GMR1 |
RF Power Field Effect Transistor |
Freescale (Motorola) |
| 5244 |
MW6S010GNR1 |
RF Power Field Effect Transistor |
Freescale (Motorola) |
| 5245 |
MW6S010MR1 |
RF Power Field Effect Transistor |
Freescale (Motorola) |
| 5246 |
MW6S010NR1 |
RF Power Field Effect Transistor |
Freescale (Motorola) |
| 5247 |
MYB-1206 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 5248 |
MYB-1206-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 5249 |
MYB-1210-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
| 5250 |
MYB-1220-33 |
High attenuation effect against high voltage pulse noise by amorphous core |
DENSEI-LAMBDA |
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