| No. |
Part Name |
Description |
Manufacturer |
| 5221 |
15116PI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
| 5222 |
15116S |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
| 5223 |
15116SI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
| 5224 |
15116X |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
| 5225 |
15116XI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
| 5226 |
1516-35 |
35 W, 28 V, 1450-1550 MHz common base transistor |
GHz Technology |
| 5227 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 5228 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 5229 |
151911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 5230 |
151911207-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 5231 |
151CMQ035 |
35V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 5232 |
151CMQ035 |
35V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 5233 |
151CMQ040 |
40V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 5234 |
151CMQ040 |
40V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 5235 |
151CMQ045 |
45V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 5236 |
151CMQ045 |
45V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 5237 |
151S |
3/8in [9.52mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Military Quality at Affordable Prices |
Vishay |
| 5238 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5239 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5240 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5241 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5242 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5243 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5244 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5245 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5246 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 5247 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 5248 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 5249 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 5250 |
1528-6 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
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