| No. |
Part Name |
Description |
Manufacturer |
| 5251 |
HN2C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 5252 |
HN2C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5253 |
HN2C10FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5254 |
HN2C11FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5255 |
HN2C12FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5256 |
HN2C12FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5257 |
HN2C13FT |
RF New Products |
TOSHIBA |
| 5258 |
HN2C14FT |
RF New Products |
TOSHIBA |
| 5259 |
HN2C26FS |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 5260 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5261 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5262 |
HN2D01JE |
Switching diode |
TOSHIBA |
| 5263 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5264 |
HN2D03F |
Switching diode |
TOSHIBA |
| 5265 |
HN2E04F |
Multi-chip discrete device (PNP + SW diode) |
TOSHIBA |
| 5266 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 5267 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 5268 |
HN2S02FU |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5269 |
HN2S02JE |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5270 |
HN2S03FE |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5271 |
HN2S03FU |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5272 |
HN2S03T |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5273 |
HN2S04FU |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5274 |
HN2V02H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 5275 |
HN3A51F |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 5276 |
HN3B01F |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 5277 |
HN3B02FU |
Transistor Silicon PNP�NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 5278 |
HN3C01F |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5279 |
HN3C01FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5280 |
HN3C02F |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
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