| No. |
Part Name |
Description |
Manufacturer |
| 5251 |
2SK2984-ZJ-E1 |
Low voltage 4V drive power MOSFET |
NEC |
| 5252 |
2SK2984-ZJ-E1(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 5253 |
2SK2984-ZJ-E2 |
Low voltage 4V drive power MOSFET |
NEC |
| 5254 |
2SK2984-ZJ-E2(JM) |
Low voltage 4V drive power MOSFET |
NEC |
| 5255 |
2SK30 |
Low-Frequency Amp Applications |
SANYO |
| 5256 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
| 5257 |
2SK3000 |
Silicon N Channel MOS FET Low Frequency Power Switching |
Hitachi Semiconductor |
| 5258 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 5259 |
2SK303 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 5260 |
2SK304 |
N-Channel Silicon MOSFET Low-Frequency Aplifier Applications |
SANYO |
| 5261 |
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 5262 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 5263 |
2SK3320 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 5264 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 5265 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 5266 |
2SK369 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 5267 |
2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 5268 |
2SK371 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 5269 |
2SK389 |
N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 5270 |
2SK406 |
Low Noise Ku-K BAND GaAs FET (This NE71083 datasheet is also the datasheet of 2SK406, see the Electrical Characteristics table) |
NEC |
| 5271 |
2SK407 |
Low noise Ku-K band GaAs MESFET for HI REL applications only (This datasheet of NE67383 is also the datasheet of 2SK407, see the Electrical Characteristics table) |
NEC |
| 5272 |
2SK436 |
High-Frequency,Low-Frequency General-Purpose Amp Applications |
SANYO |
| 5273 |
2SK58 |
Silicon N-Channel Junction Type Dual FET (DC-to-VHF Use, Low Noise) |
SONY |
| 5274 |
2SK609 |
Low Noise Ku-K BAND GaAs FET (This NE71084 datasheet is also the datasheet of 2SK609, see the Electrical Characteristics table) |
NEC |
| 5275 |
2SK771 |
Low-Frequency General-Purpose Amp Applications |
SANYO |
| 5276 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 5277 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 5278 |
2SK932 |
N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier Applications |
SANYO |
| 5279 |
2ST31A |
Low voltage NPN power transistor |
ST Microelectronics |
| 5280 |
2STBN15D100 |
Low voltage NPN power Darlington transistor |
ST Microelectronics |
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