| No. |
Part Name |
Description |
Manufacturer |
| 5251 |
APPLICATION NOTE |
Field Effect Transistors in theory and practice |
Motorola |
| 5252 |
APR-B10 |
AC Current transducer APR-B10 |
LEM |
| 5253 |
APR-B420L |
AC Current transducer APR-B420L |
LEM |
| 5254 |
APR100-B10 |
AC Current transducer APR-B10 |
LEM |
| 5255 |
APR100-B420L |
AC Current transducer APR-B420L |
LEM |
| 5256 |
APR200-B10 |
AC Current transducer APR-B10 |
LEM |
| 5257 |
APR200-B420L |
AC Current transducer APR-B420L |
LEM |
| 5258 |
APR400-B10 |
AC Current transducer APR-B10 |
LEM |
| 5259 |
APR400-B420L |
AC Current transducer APR-B420L |
LEM |
| 5260 |
APR50-B10 |
AC Current transducer APR-B10 |
LEM |
| 5261 |
APR50-B420L |
AC Current transducer APR-B420L |
LEM |
| 5262 |
AQW210EHA |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. |
Matsushita Electric Works(Nais) |
| 5263 |
AQW210EHAX |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. Picked from the 1/2/3/4-pin side. |
Matsushita Electric Works(Nais) |
| 5264 |
AQW210EHAZ |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 350 V, load current 120 mA. Surface-mount trminal. Picked from the 5/6/7/8-pin side. |
Matsushita Electric Works(Nais) |
| 5265 |
AQW214EHA |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount trminal. |
Matsushita Electric Works(Nais) |
| 5266 |
AQW214EHAX |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount trminal. Picked from the 1/2/3/4-pin side. |
Matsushita Electric Works(Nais) |
| 5267 |
AQW214EHAZ |
PhotoMOS relay, GU (general use), E-type, 2-channel (form A) type. I/O isolation: reinforced 5,000V. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount trminal. Picked from the 5/6/7/8-pin side. |
Matsushita Electric Works(Nais) |
| 5268 |
ARZ225C05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 5269 |
ARZ225C12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 5270 |
ARZ225C24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage 24 V DC. |
Matsushita Electric Works(Nais) |
| 5271 |
ASY26 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 5272 |
ASY27 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 5273 |
ASY28 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 5274 |
ASY29 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 5275 |
ASY50 |
PNP Germanium AF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 5276 |
ASY54N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 5277 |
ASY55N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 5278 |
ASY56N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 5279 |
ASY57N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 5280 |
ASY58N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
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