| No. |
Part Name |
Description |
Manufacturer |
| 5281 |
1N3483 |
8 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5282 |
1N349 |
Silicon Rectifier Diode, replacement MR1121 |
Motorola |
| 5283 |
1N355 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5284 |
1N355 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5285 |
1N3592 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5286 |
1N3592 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5287 |
1N3595 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
| 5288 |
1N3595-1 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
| 5289 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 5290 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 5291 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 5292 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 5293 |
1N3611GP |
Glass Passivated Junction Rectifiers, Forward Current 1.0A |
Vishay |
| 5294 |
1N3612GP |
Glass Passivated Junction Rectifiers, Forward Current 1.0A |
Vishay |
| 5295 |
1N3613GP |
Glass Passivated Junction Rectifiers, Forward Current 1.0A |
Vishay |
| 5296 |
1N3614GP |
Glass Passivated Junction Rectifiers, Forward Current 1.0A |
Vishay |
| 5297 |
1N3666M1 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5298 |
1N3666M1 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5299 |
1N3666M2 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5300 |
1N3666M2 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5301 |
1N367 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5302 |
1N367 |
15 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5303 |
1N3675 |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 5304 |
1N3675A |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 5305 |
1N3675B |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 5306 |
1N3676 |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 5307 |
1N3676A |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 5308 |
1N3676B |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 5309 |
1N3677 |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
| 5310 |
1N3677A |
Oxide passivated silicon zener diode in void-free, transfer-molded 3/4-watt |
Motorola |
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