| No. |
Part Name |
Description |
Manufacturer |
| 5281 |
P6KE170CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5282 |
P6KE18 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 5283 |
P6KE180 |
146.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5284 |
P6KE180 |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5285 |
P6KE180A |
154.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5286 |
P6KE180C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5287 |
P6KE180CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5288 |
P6KE180CA |
UNI AND BIDIRECTIONAL TYPES/ PEAK PULSEPOWER : 600W |
ST Microelectronics |
| 5289 |
P6KE18A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 5290 |
P6KE20 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 5291 |
P6KE200 |
162.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5292 |
P6KE200A |
171.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5293 |
P6KE200C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 180 V, Vbr(max) = 220 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5294 |
P6KE200CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5295 |
P6KE20A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 5296 |
P6KE22 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 5297 |
P6KE220 |
175.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5298 |
P6KE220A |
185.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5299 |
P6KE220C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5300 |
P6KE220CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 209 V, Vbr(max) = 231 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5301 |
P6KE22A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 5302 |
P6KE22A |
UNI AND BIDIRECTIONAL TYPES/ PEAK PULSEPOWER : 600W |
ST Microelectronics |
| 5303 |
P6KE22CA |
UNI AND BIDIRECTIONAL TYPES/ PEAK PULSEPOWER : 600W |
ST Microelectronics |
| 5304 |
P6KE24 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 5305 |
P6KE24A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 5306 |
P6KE24CA |
UNI AND BIDIRECTIONAL TYPES/ PEAK PULSEPOWER : 600W |
ST Microelectronics |
| 5307 |
P6KE250 |
202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5308 |
P6KE250A |
202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 5309 |
P6KE250C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 225 V, Vbr(max) = 275 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5310 |
P6KE250CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 237 V, Vbr(max) = 263 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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