| No. |
Part Name |
Description |
Manufacturer |
| 5281 |
HN1D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5282 |
HN1D03F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5283 |
HN1D03FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5284 |
HN1D04FU |
Switching diode |
TOSHIBA |
| 5285 |
HN1J02FU |
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 5286 |
HN1K02FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 5287 |
HN1K03FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 5288 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 5289 |
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
TOSHIBA |
| 5290 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 5291 |
HN1L02FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 5292 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 5293 |
HN1V01H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 5294 |
HN1V02H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 5295 |
HN2A01FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 5296 |
HN2A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 5297 |
HN2A26FS |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 5298 |
HN2C01FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 5299 |
HN2C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 5300 |
HN2C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5301 |
HN2C10FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5302 |
HN2C11FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5303 |
HN2C12FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5304 |
HN2C12FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5305 |
HN2C13FT |
RF New Products |
TOSHIBA |
| 5306 |
HN2C14FT |
RF New Products |
TOSHIBA |
| 5307 |
HN2C26FS |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 5308 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5309 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5310 |
HN2D01JE |
Switching diode |
TOSHIBA |
| | | |
