| No. |
Part Name |
Description |
Manufacturer |
| 5311 |
5KP120A |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5312 |
5KP130 |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5313 |
5KP130A |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5314 |
5KP150 |
150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5315 |
5KP150A |
150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5316 |
5KP160 |
160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5317 |
5KP160A |
160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5318 |
5KP170 |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5319 |
5KP170A |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5320 |
5KP180 |
180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5321 |
5KP180A |
180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5322 |
630D |
Aluminum Capacitors, + 125°C, Miniature, Axial Lead, Extended Temperature Range, Economical, High reliability design, For timing circuit applications |
Vishay |
| 5323 |
672-1175M |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
etc |
| 5324 |
71RIA100 |
V(rrm/drm): 1000V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 5325 |
71RIA120 |
V(rrm/drm): 1200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 5326 |
7343-2USRC |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
| 5327 |
7343-S1060 |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
| 5328 |
75460 |
PERIPHERAL DRIVERS FOR HIGH-VOLTAGE HIGH-CURRENT DRIVER APPLICATIONS |
Texas Instruments |
| 5329 |
75464 |
PERIPHERAL DRIVERS FOR HIGH-VOLTAGE HIGH-CURRENT DRIVER APPLICATIONS |
Texas Instruments |
| 5330 |
800EXD28 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5331 |
800EXD29 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5332 |
800EXH22 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5333 |
800FXD29 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5334 |
800JXH23 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5335 |
80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
| 5336 |
81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 5337 |
81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 5338 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 5339 |
81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
| 5340 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
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