| No. |
Part Name |
Description |
Manufacturer |
| 5311 |
MCP6285 |
Package Types: PDIP, SOIC, MSOP Microchip’s MCP62x5 devices are extended industrial-temperature range (-40°C to +125°C), ... |
Microchip |
| 5312 |
MD51V64405 |
16,777,216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
| 5313 |
MD51V64405 |
16 /777 /216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
OKI electronic eomponets |
| 5314 |
MD51V65165 |
4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
| 5315 |
MD51V65165 |
4 /194 /304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
OKI electronic eomponets |
| 5316 |
MD51V65805 |
8,388,608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
| 5317 |
MD51V65805 |
8 /388 /608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
OKI electronic eomponets |
| 5318 |
MGF1304A |
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
Mitsubishi Electric Corporation |
| 5319 |
MGFC1403 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type |
Mitsubishi Electric Corporation |
| 5320 |
MGFC1801 |
FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE |
Mitsubishi Electric Corporation |
| 5321 |
MMF1 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=300µAdc |
Motorola |
| 5322 |
MMF2 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=750µAdc |
Motorola |
| 5323 |
MMF3 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=300µAdc |
Motorola |
| 5324 |
MMF4 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=750µAdc |
Motorola |
| 5325 |
MMF5 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=300µAdc |
Motorola |
| 5326 |
MMF6 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=750µAdc |
Motorola |
| 5327 |
MSC23108C |
1,048,576-wordx8-Bit DRAM MODULE:FAST PAGE MODE TYPE |
OKI electronic components |
| 5328 |
MSC23108CL-XXDS2 |
1,048,576-wordx8-Bit DRAM MODULE:FAST PAGE MODE TYPE |
OKI electronic components |
| 5329 |
MSC23109C |
1,048,576-word x 9-Bit DRAM MODULE:FAST PAGE MODE TYPE |
OKI electronic components |
| 5330 |
MSC23109CL-XXDS3 |
1,048,576-word x 9-Bit DRAM MODULE:FAST PAGE MODE TYPE |
OKI electronic components |
| 5331 |
MSC23109D |
1,048,576 Word By 9 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE |
OKI electronic components |
| 5332 |
MSC23109D-XXBS |
1,048,576 Word By 9 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE |
OKI electronic components |
| 5333 |
MSC23109DS3 |
1,048,576 Word By 9 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE |
OKI electronic components |
| 5334 |
MSC2313258A |
1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
| 5335 |
MSC2313258A-XXBS2 |
1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
| 5336 |
MSC2313258A-XXDS2 |
1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
| 5337 |
MSC2313258D |
1,048,576-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
| 5338 |
MSC2313258D-XXBS2 |
1,048,576-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
| 5339 |
MSC2313258D-XXDS2 |
1,048,576-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
| 5340 |
MSC23132C |
1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE |
OKI electronic components |
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