| No. |
Part Name |
Description |
Manufacturer |
| 5311 |
MF3304 |
PNP silicon epitaxial transistor designed for low-level, high-speed switching applications |
Motorola |
| 5312 |
MIC933-1 |
Two exanders (expansion elements) with four inputs each |
ITT Industries |
| 5313 |
MIC933-5 |
Two exanders (expansion elements) with four inputs each |
ITT Industries |
| 5314 |
MJ1000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 5315 |
MJ1001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 5316 |
MJ15015 |
Silicon Epitaxial Planar Transistor |
Wing Shing Computer Components |
| 5317 |
MJ2500 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
| 5318 |
MJ2500 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 5319 |
MJ2501 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
| 5320 |
MJ2501 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 5321 |
MJ3000 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
| 5322 |
MJ3000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 5323 |
MJ3001 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
| 5324 |
MJ3001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 5325 |
MJ900 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 5326 |
MJ901 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 5327 |
MJE2955T |
SILICON EPITAXIAL PLANAR TRANSISTOR |
Wing Shing Computer Components |
| 5328 |
MJE3055 |
SILICON EPITAXIAL PLANAR TRANSISTOR |
Wing Shing Computer Components |
| 5329 |
MJE3055T |
SILICON EPITAXIAL PLANAR TRANSISTOR |
Wing Shing Computer Components |
| 5330 |
MJE700 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5331 |
MJE701 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5332 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5333 |
MJE703 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5334 |
MJE800 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5335 |
MJE801 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5336 |
MJE802 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5337 |
MJE803 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 5338 |
MM2483 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 5339 |
MM2484 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 5340 |
MM3000 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V |
Motorola |
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