| No. |
Part Name |
Description |
Manufacturer |
| 5311 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5312 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5313 |
HN2D01JE |
Switching diode |
TOSHIBA |
| 5314 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 5315 |
HN2D03F |
Switching diode |
TOSHIBA |
| 5316 |
HN2E04F |
Multi-chip discrete device (PNP + SW diode) |
TOSHIBA |
| 5317 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 5318 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 5319 |
HN2S02FU |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5320 |
HN2S02JE |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5321 |
HN2S03FE |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5322 |
HN2S03FU |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5323 |
HN2S03T |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5324 |
HN2S04FU |
Small-signal Schottky barrier diode |
TOSHIBA |
| 5325 |
HN2V02H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 5326 |
HN3A51F |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 5327 |
HN3B01F |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 5328 |
HN3B02FU |
Transistor Silicon PNP�NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 5329 |
HN3C01F |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5330 |
HN3C01FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5331 |
HN3C02F |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5332 |
HN3C02FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5333 |
HN3C03F |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5334 |
HN3C03FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5335 |
HN3C06F |
Silicon NPN epitaxial planar type transistor, marking WE |
TOSHIBA |
| 5336 |
HN3C07F |
Silicon NPN epitaxial planar type transistor, marking WF |
TOSHIBA |
| 5337 |
HN3C08F |
Silicon NPN epitaxial planar type transistor, marking WG |
TOSHIBA |
| 5338 |
HN3C09F |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5339 |
HN3C09FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 5340 |
HN3C10F |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
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