| No. |
Part Name |
Description |
Manufacturer |
| 5341 |
800EXD28 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5342 |
800EXD29 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5343 |
800EXH22 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5344 |
800FXD29 |
ALLOY-FREE RECTIFIER (RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5345 |
800JXH23 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 5346 |
80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
| 5347 |
81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 5348 |
81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 5349 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 5350 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 5351 |
81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 5352 |
81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 5353 |
81720-20 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 5354 |
81922-18 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 5355 |
81RIA100 |
V(rrm/drm): 1000V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 5356 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 5357 |
82023-10 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 5358 |
82023-16 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 5359 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 5360 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5361 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5362 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 5363 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5364 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5365 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5366 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5367 |
83000 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 5368 |
83001 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 5369 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 5370 |
854550-1 |
69.99 MHz SAW Bandpass Filter for CDMA Basestation Receiver Applications Part Number 854550-1 |
etc |
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