| No. |
Part Name |
Description |
Manufacturer |
| 5341 |
27C512 |
512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 5342 |
27C512-120 |
512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 5343 |
27C64 |
64 Kbit 8Kb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 5344 |
27C64-150 |
64 Kbit 8Kb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 5345 |
27C64-200 |
64 Kbit 8Kb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 5346 |
27C800 |
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM |
ST Microelectronics |
| 5347 |
27C801 |
8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 5348 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
| 5349 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
| 5350 |
28 DIP |
28DIP Package Dimensions |
Samsung Electronic |
| 5351 |
28 SOP |
28SOP Package Dimensions |
Samsung Electronic |
| 5352 |
28-FEB |
10 TO 1000 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
| 5353 |
285D |
Foil Tantalum Replacement, Gelled-Electrolyte Sintered Anode Tantalex, for Operation to + 125°C, Hermetically-Sealed |
Vishay |
| 5354 |
28C16 |
16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION |
ST Microelectronics |
| 5355 |
28C256AJC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 5356 |
28C256AJC-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5357 |
28C256AJC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 5358 |
28C256AJC-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5359 |
28C256AJC-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5360 |
28C256AJC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 5361 |
28C256AJC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 5362 |
28C256AJC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5363 |
28C256AJI-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5364 |
28C256AJI-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 5365 |
28C256AJI-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5366 |
28C256AJI-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 5367 |
28C256AJI-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 5368 |
28C256AJI-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 5369 |
28C256AJI-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 5370 |
28C256AJI-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
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