| No. |
Part Name |
Description |
Manufacturer |
| 5371 |
BC558 |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5372 |
BC558A |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5373 |
BC558B |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5374 |
BC558C |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5375 |
BC559 |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5376 |
BC559A |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5377 |
BC559B |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5378 |
BC559C |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5379 |
BC560 |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5380 |
BC560A |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5381 |
BC560B |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5382 |
BC560C |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 5383 |
BC848A |
hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 5384 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
| 5385 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
| 5386 |
BCP75W |
5V and 3.3V, "Half-Brick" 75 Watt, DC/DC Converters |
Datel |
| 5387 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 5388 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 5389 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 5390 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 5391 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 5392 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 5393 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 5394 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 5395 |
BCR10CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 5396 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 5397 |
BCR10PM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 5398 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 5399 |
BCR12 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 5400 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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