| No. |
Part Name |
Description |
Manufacturer |
| 5401 |
KM418RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 5402 |
KM418RD8C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 5403 |
KM418RD8D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 5404 |
KM4216C256 |
256K X 16 BIT CMOS VIDEO RAM |
Samsung Electronic |
| 5405 |
KM4216V256 |
256K X 16 BIT CMOS VIDEO RAM |
Samsung Electronic |
| 5406 |
KM424C64 |
64K X 4 Bit CMOS VIDEO RAM |
Samsung Electronic |
| 5407 |
KM424C64-10 |
64K X 4 Bit CMOS VIDEO RAM |
Samsung Electronic |
| 5408 |
KM424C64-12 |
64K X 4 Bit CMOS VIDEO RAM |
Samsung Electronic |
| 5409 |
KM424C64Z |
64K X 4 Bit CMOS VIDEO RAM |
Samsung Electronic |
| 5410 |
KM428C256 |
256K x 8 Bit CMOS Video RAM |
Samsung Electronic |
| 5411 |
KM44C4104A-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5412 |
KM44C4104A-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5413 |
KM44C4104A-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5414 |
KM44C4104A-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5415 |
KM44C4104AL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5416 |
KM44C4104AL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5417 |
KM44C4104AL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5418 |
KM44C4104AL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5419 |
KM44C4104ALL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5420 |
KM44C4104ALL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5421 |
KM44C4104ALL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5422 |
KM44C4104ALL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5423 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5424 |
KM44C4104ASL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5425 |
KM44C4104ASL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5426 |
KM44C4104ASL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 5427 |
KM6164000B |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 5428 |
KM6164000BL-L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 5429 |
KM6164000BLI-L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
| 5430 |
KM6164000BLR-5L |
256Kx16 bit Low Power CMOS Static RAM |
Samsung Electronic |
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