| No. |
Part Name |
Description |
Manufacturer |
| 5401 |
1N6303 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 5402 |
1N6303 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 5403 |
1N6303A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 5404 |
1N631 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5405 |
1N632 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5406 |
1N633 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5407 |
1N634 |
115 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5408 |
1N635 |
165 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5409 |
1N636 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 5410 |
1N6378 |
High Power Surmetic Transient Suppressor |
ON Semiconductor |
| 5411 |
1N6492 |
Hermetic shottky rectifier (4 Amp, 45 Volts) |
Unitrode |
| 5412 |
1N658 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 5413 |
1N659 |
50 V, 500 mW general purpose diode |
BKC International Electronics |
| 5414 |
1N660 |
100 V, 500 mW general purpose diode |
BKC International Electronics |
| 5415 |
1N661 |
200 V, 500 mW general purpose diode |
BKC International Electronics |
| 5416 |
1N695 |
20 V, 500 mA, gold bonded diode |
BKC International Electronics |
| 5417 |
1N695 |
JEDEC DO-7 PACKAGE |
Jedec |
| 5418 |
1N695A |
25 V, 500 mA, gold bonded diode |
BKC International Electronics |
| 5419 |
1N695A |
JEDEC DO-7 PACKAGE |
Jedec |
| 5420 |
1N746 |
3.3 V, 400 mW silicon linear diode |
BKC International Electronics |
| 5421 |
1N746 |
500mW SILICON ZENER DIODES |
Jinan Gude Electronic Device |
| 5422 |
1N746A |
3.3 V, 400 mW silicon linear diode |
BKC International Electronics |
| 5423 |
1N746A |
500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 5424 |
1N746C |
500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 5425 |
1N746D |
500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 5426 |
1N747 |
3.6 V, 400 mW silicon linear diode |
BKC International Electronics |
| 5427 |
1N747 |
500mW SILICON ZENER DIODES |
Jinan Gude Electronic Device |
| 5428 |
1N747A |
3.6 V, 400 mW silicon linear diode |
BKC International Electronics |
| 5429 |
1N747A |
500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 5430 |
1N747C |
500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
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