| No. |
Part Name |
Description |
Manufacturer |
| 5401 |
TPS1101YDW |
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 5402 |
TPS1101YPW |
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 5403 |
TPS1120 |
Dual P-channel Enhancemenent-Mode MOSFET |
Texas Instruments |
| 5404 |
TPS1120D |
Dual P-channel Enhancemenent-Mode MOSFET |
Texas Instruments |
| 5405 |
TPS1120DG4 |
Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC |
Texas Instruments |
| 5406 |
TPS1120DR |
Dual P-channel Enhancemenent-Mode MOSFET |
Texas Instruments |
| 5407 |
TPS1120Y |
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 5408 |
TPS1120YD |
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS |
Texas Instruments |
| 5409 |
TSD4M150 |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 5410 |
TSD4M150F |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 5411 |
TSD4M150F |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 5412 |
TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 5413 |
TSD4M150V |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 5414 |
TSM2N60 |
N CHANNEL POWER ENHANCEMENT MODE MOSFET |
Taiwan Semiconductor |
| 5415 |
TSM2N60CH |
N CHANNEL POWER ENHANCEMENT MODE MOSFET |
Taiwan Semiconductor |
| 5416 |
TSM2N60CP |
N CHANNEL POWER ENHANCEMENT MODE MOSFET |
Taiwan Semiconductor |
| 5417 |
TZ400BD |
30 V, 80 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 5418 |
TZ402BD |
15 V, 80 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 5419 |
TZ403BD |
15 V, 60 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 5420 |
TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 5421 |
TZ404CY |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 5422 |
UFT5-28 |
UHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
| 5423 |
UFT5-28SL |
UHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
| 5424 |
UGF27025 |
25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
etc |
| 5425 |
UGF27025F |
25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
etc |
| 5426 |
UPA1706G-E1 |
Nch enhancement type power MOS FET |
NEC |
| 5427 |
UPA1706G-E2 |
Nch enhancement type power MOS FET |
NEC |
| 5428 |
UPA1706TP-E1 |
Nch enhancement type power MOS FET |
NEC |
| 5429 |
UPA1706TP-E2 |
Nch enhancement type power MOS FET |
NEC |
| 5430 |
UPA1707G-E1 |
Nch enhancement type power MOS FET |
NEC |
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