| No. |
Part Name |
Description |
Manufacturer |
| 5401 |
MP6754 |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 5402 |
MP6757 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 5403 |
MP6759 |
GTR Module Silicon N Channel IGBT Motor Control Applications High Power Switching Applications |
TOSHIBA |
| 5404 |
MP6801 |
Power MOS FET Module Silicon N / P Channel MOS Type |
TOSHIBA |
| 5405 |
MP6901 |
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 5406 |
MP7001 |
Power Module |
TOSHIBA |
| 5407 |
MP7002 |
Power Module |
TOSHIBA |
| 5408 |
MP7003 |
Power Module |
TOSHIBA |
| 5409 |
MT3S03AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5410 |
MT3S03AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5411 |
MT3S03AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5412 |
MT3S04AS |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5413 |
MT3S04AT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5414 |
MT3S04AU |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5415 |
MT3S05T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5416 |
MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5417 |
MT3S06T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5418 |
MT3S06U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5419 |
MT3S07S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5420 |
MT3S07T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5421 |
MT3S07U |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5422 |
MT3S08T |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 5423 |
MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5424 |
MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5425 |
MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5426 |
MT3S113 |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5427 |
MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5428 |
MT3S113TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor |
TOSHIBA |
| 5429 |
MT3S150P |
Gallium-Arsenide heterojunction bipolar transistor |
TOSHIBA |
| 5430 |
MT3S15TU |
Radio-frequency bipolar transistor |
TOSHIBA |
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