| No. |
Part Name |
Description |
Manufacturer |
| 5401 |
IS62WV12816BLL-55T |
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 5402 |
IS62WV12816BLL-55TI |
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 5403 |
IS62WV12816BLL-55TLI |
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 5404 |
IS64C6416AL |
64K x 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 5405 |
IS64C6416AL-15KA3 |
64K x 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 5406 |
IS64C6416AL-15TA3 |
64K x 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 5407 |
IS65C6416AL |
64K x 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 5408 |
IS65C6416AL-45KA3 |
64K x 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 5409 |
IS65C6416AL-45TA3 |
64K x 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 5410 |
K1S321615M |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet |
Samsung Electronic |
| 5411 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 5412 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 5413 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 5414 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 5415 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 5416 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 5417 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 5418 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 5419 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 5420 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 5421 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 5422 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 5423 |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 5424 |
K4F171611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 5425 |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 5426 |
K4F171612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 5427 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 5428 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 5429 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 5430 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
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