| No. |
Part Name |
Description |
Manufacturer |
| 541 |
PS2833-4-V-F4 |
HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI OPTOCOUPLER |
NEC |
| 542 |
PS2913-1-F3 |
Single tr. output, high collector to emitter voltage optocoupler. |
NEC |
| 543 |
PS2913-1-F4 |
Single tr. output, high collector to emitter voltage optocoupler. |
NEC |
| 544 |
PS2932-1-F3 |
High collector to emitter voltage optocoupler. |
NEC |
| 545 |
PS2932-1-F4 |
High collector to emitter voltage optocoupler. |
NEC |
| 546 |
PS2933-1-F3 |
High collector to emitter voltage optocoupler. |
NEC |
| 547 |
PS2933-1-F4 |
High collector to emitter voltage optocoupler. |
NEC |
| 548 |
Q62702-F1240 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 549 |
Q62702-F1287 |
NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion) |
Siemens |
| 550 |
Q62702-F944 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 551 |
Q62702-F979 |
NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) |
Siemens |
| 552 |
Q62702-P0330 |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package |
Siemens |
| 553 |
Q62702-P1055 |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package |
Siemens |
| 554 |
Q62702-P1690 |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package |
Siemens |
| 555 |
Q62703-P0331 |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package |
Siemens |
| 556 |
Q62703-Q1094 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm |
Siemens |
| 557 |
Q62703-Q1095 |
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm |
Siemens |
| 558 |
Q62703-Q2174 |
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm |
Siemens |
| 559 |
QIC0610001 |
Dual Common Emitter IGBT Module 100A 600V Per Switch |
Powerex Power Semiconductors |
| 560 |
QIC0620001 |
Dual Common Emitter IGBT Module 200A 600V Per Switch |
Powerex Power Semiconductors |
| 561 |
QIC0620003 |
Dual IGBT Common Emitter Module (200 Amp/600 Volts) |
Powerex Power Semiconductors |
| 562 |
S175-50 |
175 W, 50 V, 1.5-30 MHz common emitter transistor |
GHz Technology |
| 563 |
S200-50 |
200 W, 50 V, 1.5-30 MHz common emitter transistor |
GHz Technology |
| 564 |
SD1070 |
Silicon epitaxial NPN planar high-frequency transistor employs a multi emitter electrode design 28V 13.5W |
SGS Thomson Microelectronics |
| 565 |
SD1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 566 |
SE302A |
Light emitting diode. GaAs infrared emitter diode industrial use. |
NEC |
| 567 |
SFH420 |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package |
Siemens |
| 568 |
SFH4200 |
High-Speed GaAs Infrared Emitter (950... |
Infineon |
| 569 |
SFH4205 |
High-Speed GaAs Infrared Emitter (950... |
Infineon |
| 570 |
SFH421 |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package |
Siemens |
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