| No. |
Part Name |
Description |
Manufacturer |
| 541 |
12JC11 |
Silicon diffused junction rectifier 600V 12A |
TOSHIBA |
| 542 |
12LC11 |
Silicon diffused junction rectifier 800V 12A |
TOSHIBA |
| 543 |
12LF11 |
Silicon alloy-diffused junction avalanche rectifier 800V 12A 3.8kW |
TOSHIBA |
| 544 |
12NC11 |
Silicon diffused junction rectifier 1000V 12A |
TOSHIBA |
| 545 |
12NF11 |
Silicon alloy-diffused junction avalanche rectifier 1000V 12A 3.8kW |
TOSHIBA |
| 546 |
12QF11 |
Silicon alloy-diffused junction avalanche rectifier 1200V 12A 3.8kW |
TOSHIBA |
| 547 |
150LD11 |
Silicon alloy-diffused junction rectifier 800V 150A |
TOSHIBA |
| 548 |
150ND11 |
Silicon alloy-diffused junction rectifier 1000V 150A |
TOSHIBA |
| 549 |
150QD11 |
Silicon alloy-diffused junction rectifier 1200V 150A |
TOSHIBA |
| 550 |
150TD11 |
Silicon alloy-diffused junction rectifier 1500V 150A |
TOSHIBA |
| 551 |
150UC11 |
Silicon alloy-diffused junction rectifier 1600V 150A |
TOSHIBA |
| 552 |
15CC11 |
Silicon diffused junction rectifier 150V 15A |
TOSHIBA |
| 553 |
15CD11 |
Silicon diffused junction rectifier 150V 15A |
TOSHIBA |
| 554 |
15FC11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
| 555 |
15FD11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
| 556 |
15KE |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 557 |
15KP |
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) |
Panjit International Inc |
| 558 |
15KP100 |
100V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 559 |
15KP100 |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 560 |
15KP100A |
100V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 561 |
15KP100A |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 162 V @ Ipp = 93 A. |
Panjit International Inc |
| 562 |
15KP100C |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 563 |
15KP100CA |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 162 V @ Ipp = 93 A. |
Panjit International Inc |
| 564 |
15KP110 |
110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 565 |
15KP110 |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 566 |
15KP110A |
110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 567 |
15KP110A |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
| 568 |
15KP110C |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 569 |
15KP110CA |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A. |
Panjit International Inc |
| 570 |
15KP120 |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
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