No. |
Part Name |
Description |
Manufacturer |
541 |
3SK295 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
542 |
3SK296 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
543 |
3SK297 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
544 |
3SK298 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
545 |
3SK300 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
546 |
3SK309 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
547 |
3SK317 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
548 |
3SK318 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
549 |
3SK319 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
550 |
3SK38A |
Silicon N Channel MOS transistor (industrial applications) |
TOSHIBA |
551 |
4AK19 |
Silicon N Channel MOSFET High Speed Power Switching |
Hitachi Semiconductor |
552 |
4AK27 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
553 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
554 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
555 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
556 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
557 |
BF994 |
Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) |
Siemens |
558 |
BF994S |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
559 |
BF995 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
560 |
BF996S |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
561 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
562 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
563 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
564 |
FQBI9N50 |
500v N CHANNEL MOSFET |
Fairchild Semiconductor |
565 |
GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
566 |
GT40T101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
567 |
GT60M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
568 |
H5N2509P |
SILICON N CHANNEL MOSFET SWITCHING |
Hitachi Semiconductor |
569 |
H5N3003 |
Silicon N Channel MOS FET High Speed Power Switching |
Renesas |
570 |
H7N0307L |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
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