| No. |
Part Name |
Description |
Manufacturer |
| 541 |
NMC27C256BN25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 542 |
NMC27C256BN250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 543 |
NMC27C256BNE15 |
150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 544 |
NMC27C256BNE150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 545 |
NMC27C256BNE20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 546 |
NMC27C256BNE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 547 |
NMC27C256BNE25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 548 |
NMC27C256BNE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 549 |
NMC27C256BQ15 |
150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 550 |
NMC27C256BQ150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 551 |
NMC27C256BQ20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 552 |
NMC27C256BQ200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 553 |
NMC27C256BQ25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 554 |
NMC27C256BQ250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 555 |
NMC27C256BQE150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 556 |
NMC27C256BQE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 557 |
NMC27C256BQM150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 558 |
NMC27C256BQM200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 559 |
NMC27C256Q17 |
170 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 560 |
NMC27C256Q20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 561 |
NMC27C256Q200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 562 |
NMC27C256Q25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 563 |
NMC27C256Q250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 564 |
NMC27C256Q300 |
300 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 565 |
NMC27C256QE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 566 |
NMC27C256QE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 567 |
NMC27C256QM250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 568 |
NMC27C256QM350 |
350 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 569 |
NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM) |
NTE Electronics |
| 570 |
S6D0114 |
132-RGB X 176-DOT 1-CHIP DRIVER IC FOR 262,144-COLOR TFT-LCD DISPLAY |
Samsung Electronic |
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