| No. |
Part Name |
Description |
Manufacturer |
| 541 |
MAX6322HPUK49B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 4.900V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
| 542 |
MAX6322HPUK49C-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 4.900V, reset timeout(min) 140ms |
MAXIM - Dallas Semiconductor |
| 543 |
MAX6322HPUK49D-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 4.900V, reset timeout(min) 1120ms |
MAXIM - Dallas Semiconductor |
| 544 |
MAX6403BS39-T |
3.900 V, mP supervisory circuit in 4-bump (2 x 2) chip-scale package |
MAXIM - Dallas Semiconductor |
| 545 |
MAX6404BS39-T |
3.900 V, mP supervisory circuit in 4-bump (2 x 2) chip-scale package |
MAXIM - Dallas Semiconductor |
| 546 |
MAX6405BS39-T |
3.900 V, mP supervisory circuit in 4-bump (2 x 2) chip-scale package |
MAXIM - Dallas Semiconductor |
| 547 |
MGB79D |
1.90 X 3.97MM ROUND RECTANGULAR BARLED LAMP |
Micro Electronics |
| 548 |
MPX4105 |
OPERATING OVERVIEW INTEGRATED PRESSURE SENSOR 15 to 105 kPa (2.18 to 15.2 psi) 0.31 to 4.90 Volts Output |
Motorola |
| 549 |
MRF18060B |
MRF18060B, MRF18060BR3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 550 |
MRF18060BLSR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 551 |
MRF18060BR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 552 |
MRF18060BSR3 |
1.90–1.99 GHz, 60 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 553 |
MRF18090B |
MRF18090B, MRF18090BS 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 554 |
MRF18090BR3 |
1.90–1.99 GHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 555 |
MRF18090BSR3 |
1.90–1.99 GHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 556 |
MSB79D |
1.90 X 3.97MM ROUND RECTANGULAR BARLED LAMP |
Micro Electronics |
| 557 |
MXB79 |
1.90 X 3.97MM ROUND RECTANGULAR BARLED LAMP |
Micro Electronics |
| 558 |
MYB79D |
1.90 X 3.97MM ROUND RECTANGULAR BARLED LAMP |
Micro Electronics |
| 559 |
NJM12901 |
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100��s PULSE, 10% DUTY |
Tyco Electronics |
| 560 |
NJM12901D1 |
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100��s PULSE, 10% DUTY |
Tyco Electronics |
| 561 |
NJM12901E |
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100��s PULSE, 10% DUTY |
Tyco Electronics |
| 562 |
NJM12901M |
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100��s PULSE, 10% DUTY |
Tyco Electronics |
| 563 |
NJM12901V |
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100��s PULSE, 10% DUTY |
Tyco Electronics |
| 564 |
NX8560LJ303-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. FC-UPC connector. |
NEC |
| 565 |
NX8560LJ303-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. SC-UPC connector. |
NEC |
| 566 |
NX8560LJ381-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1538.18 nm. Frequency 194.90 THz. FC-UPC connector. |
NEC |
| 567 |
NX8560LJ381-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1538.18 nm. Frequency 194.90 THz. SC-UPC connector. |
NEC |
| 568 |
NX8560LJ461-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1546.11 nm. Frequency 193.90 THz. FC-UPC connector. |
NEC |
| 569 |
NX8560LJ461-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1546.11 nm. Frequency 193.90 THz. SC-UPC connector. |
NEC |
| 570 |
NX8560LJ469-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1546.91 nm. Frequency 193.90 THz. SC-UPC connector. |
NEC |
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