| No. |
Part Name |
Description |
Manufacturer |
| 541 |
PSD313-B-15U |
Programmable system device, 18 PLD inputs, EPROM=1Mb, SRAM=16Kb, bus width x8, 5V, 150ns |
WSI |
| 542 |
PSD313R-B-15J |
Low cost field programmable microcontroller peripherals, 150ns |
SGS Thomson Microelectronics |
| 543 |
PSD313R-B-15J |
Programmable system device, 18 PLD inputs, EPROM=1Mb, bus width x8, 5V, 150ns |
WSI |
| 544 |
PSD913F2V-15J |
Flash in-system programmable (ISP) peripherals for 8-bit MCUs, 150ns |
SGS Thomson Microelectronics |
| 545 |
PSD913F2V-15M |
Flash in-system programmable (ISP) peripherals for 8-bit MCUs, 150ns |
SGS Thomson Microelectronics |
| 546 |
PSD934F2V-15J |
Flash in-system programmable (ISP) peripherals for 8-bit MCUs, 150ns |
SGS Thomson Microelectronics |
| 547 |
PSD934F2V-15M |
Flash in-system programmable (ISP) peripherals for 8-bit MCUs, 150ns |
SGS Thomson Microelectronics |
| 548 |
SMJ4256-15FV |
262144-bit dynamic random-access memory, 150ns |
Texas Instruments |
| 549 |
SMJ4256-15JD |
262144-bit dynamic random-access memory, 150ns |
Texas Instruments |
| 550 |
SMJ4464-15 |
150ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 551 |
SMJ4C1024-15FQ |
1048576 by 1-bit dynamic random-access memory, 150ns |
Texas Instruments |
| 552 |
SMJ4C1024-15HJ |
1048576 by 1-bit dynamic random-access memory, 150ns |
Texas Instruments |
| 553 |
SMJ4C1024-15HK |
1048576 by 1-bit dynamic random-access memory, 150ns |
Texas Instruments |
| 554 |
SMJ4C1024-15HL |
1048576 by 1-bit dynamic random-access memory, 150ns |
Texas Instruments |
| 555 |
SMJ4C1024-15JD |
1048576 by 1-bit dynamic random-access memory, 150ns |
Texas Instruments |
| 556 |
SMJ4C1024-15SV |
1048576 by 1-bit dynamic random-access memory, 150ns |
Texas Instruments |
| 557 |
TC531001CF |
150ns; V(dd): -0.5 to +7V; 1M bit (128K word x 8 bit) CMOS MASK ROM |
TOSHIBA |
| 558 |
TC531024F-15 |
150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
| 559 |
TC531024P-15 |
150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
| 560 |
TC5517CF-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 561 |
TC5517CFL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 562 |
TC5517CP-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 563 |
TC5517CPL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 564 |
TC5564APL-15 |
-0.3 to 7V; 1W; 150ns; 8.192 word x 8bit MOS static RAM |
TOSHIBA |
| 565 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
| 566 |
TMS27C020-15FML |
256 x 8-��� CMOS EPROM, 150ns |
Texas Instruments |
| 567 |
TMS27C020-15JE |
256 x 8-��� CMOS EPROM, 150ns |
Texas Instruments |
| 568 |
TMS27C020-15JE4 |
256 x 8-��� CMOS EPROM, 150ns |
Texas Instruments |
| 569 |
TMS27C020-15JL |
256 x 8-��� CMOS EPROM, 150ns |
Texas Instruments |
| 570 |
TMS27C020-15JL4 |
256 x 8-��� CMOS EPROM, 150ns |
Texas Instruments |
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