| No. |
Part Name |
Description |
Manufacturer |
| 541 |
STGW30H60DFB |
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed |
ST Microelectronics |
| 542 |
STGW30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed |
ST Microelectronics |
| 543 |
STGW30N120KD |
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode |
ST Microelectronics |
| 544 |
STGW30NC60W |
30 A - 600 V - ultra fast IGBT |
ST Microelectronics |
| 545 |
STGW30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
| 546 |
STGW30V60F |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
| 547 |
STGWA30N120KD |
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode |
ST Microelectronics |
| 548 |
STGWF30NC60S |
30 A, 600 V, fast IGBT |
ST Microelectronics |
| 549 |
STGWT30H60DFB |
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed |
ST Microelectronics |
| 550 |
STGWT30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed |
ST Microelectronics |
| 551 |
STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
| 552 |
STGWT30V60F |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
| 553 |
STL130N8F7 |
N-channel 80 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package |
ST Microelectronics |
| 554 |
STL30P3LLH6 |
P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 555 |
STP30NF20 |
N-channel 200 V, 0.065 Ohm, 30 A, TO-220 STripFET(TM) Power MOSFET |
ST Microelectronics |
| 556 |
STP38N65M5 |
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
| 557 |
STPS30M100S |
100 V, 30 A power Schottky rectifier |
ST Microelectronics |
| 558 |
STPS30M100SFP |
100 V, 30 A power Schottky rectifier |
ST Microelectronics |
| 559 |
STPS30M100SR |
100 V, 30 A power Schottky rectifier |
ST Microelectronics |
| 560 |
STPS30M100ST |
100 V, 30 A power Schottky rectifier |
ST Microelectronics |
| 561 |
STPS6045CFSY1 |
Aerospace 2 x 30 A - 45 V power fast rectifier |
ST Microelectronics |
| 562 |
STPS6045HR |
Aerospace 2 x 30 A - 45 V power fast rectifier |
ST Microelectronics |
| 563 |
STW30NF20 |
N-channel 200 V, 0.065 Ohm, 30 A, TO-247 STripFET(TM) Power MOSFET |
ST Microelectronics |
| 564 |
STW38N65M5 |
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-247 package |
ST Microelectronics |
| 565 |
STY130NF20D |
N-channel 200 V, 0.01 Ohm typ., 130 A, STripFET(TM) II with fast recovery diode Power MOSFET in Max247 package |
ST Microelectronics |
| 566 |
STY139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in Max247 package |
ST Microelectronics |
| 567 |
T6401B |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 200 V. |
Motorola |
| 568 |
T6401D |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 400 V. |
Motorola |
| 569 |
T6401M |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 600 V. |
Motorola |
| 570 |
T6401N |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 800 V. |
Motorola |
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