| No. |
Part Name |
Description |
Manufacturer |
| 541 |
IRF420 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 542 |
IRF420-423 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 543 |
IRF421 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 544 |
IRF422 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 545 |
IRF423 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 546 |
IRF440 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
| 547 |
IRF440-443 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
| 548 |
IRF441 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
| 549 |
IRF442 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
| 550 |
IRF443 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
| 551 |
IRF731 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 552 |
IRF732 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 553 |
IRF733 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 554 |
IRF821 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 555 |
IRF822 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 556 |
IRF823 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
| 557 |
IRF841 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
| 558 |
IRF842 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
| 559 |
IRF843 |
N-Channel Power MOSFETs/ 8A/ 450 V/500V |
Fairchild Semiconductor |
| 560 |
IRF9231 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 561 |
IRF9233 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 562 |
IRF9241 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 563 |
IRF9243 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 564 |
IRF9631 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 565 |
IRF9633 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 566 |
IRF9641 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 567 |
IRF9643 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 568 |
IRFF311 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
| 569 |
IRFF313 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
| 570 |
IRFP9231 |
150 V, P-channel power MOSFET |
Samsung Electronic |
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