| No. |
Part Name |
Description |
Manufacturer |
| 541 |
BCM5673 |
10-Gigabit Ethernet and HiGig™ Multilayer Switch |
Broadcom |
| 542 |
BCM5674 |
10-Gigabit Ethernet and HiGig™ Advanced Multilayer Switch |
Broadcom |
| 543 |
BD63730EFV |
36V High-performance and High-reliability Withstand Voltage Stepping Motor Driver |
ROHM |
| 544 |
BD63730EFV-E2 |
36V High-performance and High-reliability Withstand Voltage Stepping Motor Driver |
ROHM |
| 545 |
BF297 |
Silicon NPN Epitaxial Planar Low Power and High Voltage Transistor |
IPRS Baneasa |
| 546 |
BF298 |
Silicon NPN Epitaxial Planar Low Power and High Voltage Transistor |
IPRS Baneasa |
| 547 |
BF299 |
Silicon NPN Epitaxial Planar Low Power and High Voltage Transistor |
IPRS Baneasa |
| 548 |
BF470 |
Silicon PNP triple diffused high-voltage transistor |
TOSHIBA |
| 549 |
BF472 |
Silicon PNP triple diffused high-voltage transistor |
TOSHIBA |
| 550 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
| 551 |
BFR35A |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
Siemens |
| 552 |
BFR35AR |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS AND HIGH-SPEED SWITCHING APPLICATIONS |
Siemens |
| 553 |
BGU7063 |
Analog controlled high linearity low noise variable gain amplifier |
NXP Semiconductors |
| 554 |
BSP280 |
IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current) |
Siemens |
| 555 |
BSX19 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 556 |
BSX20 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 557 |
BSY27 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 558 |
BSY95A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 559 |
BU407D |
Silicon NPN triple diffused high voltage transistor |
TOSHIBA |
| 560 |
BUF08832 |
Programmable Gamma-Voltage Generator and High Slew Rate Vcom with Integrated Two-Bank Memory |
Texas Instruments |
| 561 |
BUF08832AIPWPR |
8-CH Gamma-Voltage Generator and High Slew Rate Vcom with Integrated Two-Bank Memory 20-HTSSOP -40 to 95 |
Texas Instruments |
| 562 |
BUX20 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTOR |
SemeLAB |
| 563 |
BUX39 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR |
SemeLAB |
| 564 |
BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR |
SemeLAB |
| 565 |
BY140 |
High Speed High Voltage Diode, superseded by the BY176 |
Philips |
| 566 |
C3350 |
�3kV REGULATED HIGH VOLTAGE POWER SUPPLY |
Hamamatsu Corporation |
| 567 |
C3360 |
-5kV REGULATED HIGH VOLTAGE POWER SUPPLY |
Hamamatsu Corporation |
| 568 |
CGA-3318 |
Dual CATV Broadband High Linearity SiGe HBT Amplifier |
Stanford Microdevices |
| 569 |
CGA-6618 |
DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER |
Stanford Microdevices |
| 570 |
CLC401 |
Fast Settling, Wideband High-Gain Monolithic Operational Amplifiers |
Comlinear Corporation |
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