| No. |
Part Name |
Description |
Manufacturer |
| 541 |
ND5558-00 |
4 V, GaAs beam lead schottky barrier diode |
NEC |
| 542 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
| 543 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 544 |
NTHD4N02F |
Power MOSFET and Schottky Diode |
ON Semiconductor |
| 545 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 546 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 547 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 548 |
NTHD4P02F |
Power MOSFET and Schottky Diode |
ON Semiconductor |
| 549 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 550 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 551 |
NTLGF3402P |
Power MOSFET and Schottky Diode, -20 V, -3.9 A, P-Channel |
ON Semiconductor |
| 552 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
| 553 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
| 554 |
NTLJF3117P |
Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel |
ON Semiconductor |
| 555 |
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode |
ON Semiconductor |
| 556 |
NTLJF4156N |
Power MOSFET and Schottky Diode, 30 V, 4.6 A, N-Channel |
ON Semiconductor |
| 557 |
NTLLD4901NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel |
ON Semiconductor |
| 558 |
NTMD4184PF |
Power MOSFET and Schottky Diode, -30 V, -4.0 A, Single P-Channel |
ON Semiconductor |
| 559 |
NTMD4884NF |
Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel |
ON Semiconductor |
| 560 |
NTMFD4901NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel |
ON Semiconductor |
| 561 |
NTMFD4902NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel |
ON Semiconductor |
| 562 |
NTMSD2P102LR2-D |
FETKY E Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 563 |
NTMSD3P102 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 564 |
NTMSD3P102R2 |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 565 |
NTMSD3P102R2-D |
FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 566 |
NTMSD3P303 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 567 |
NTMSD3P303R2 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 568 |
NTMSD3P303R2-D |
FETKY E P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package |
ON Semiconductor |
| 569 |
NTS8100MFS |
Very Low Forward Voltage Trench-Based Schottky Rectifier |
ON Semiconductor |
| 570 |
NTSJ2080CT |
Very Low Forward Voltage Trench-based Schottky Rectifier |
ON Semiconductor |
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