| No. |
Part Name |
Description |
Manufacturer |
| 541 |
2SA312 |
High-Speed Switching Transistor |
TOSHIBA |
| 542 |
2SA372 |
High-Speed Switching Transistor |
TOSHIBA |
| 543 |
2SA446 |
High-Speed Switching Transistor |
TOSHIBA |
| 544 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 545 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 546 |
2SA50 |
High-Speed Switching Transistor |
TOSHIBA |
| 547 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 548 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 549 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 550 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 551 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 552 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 553 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 554 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 555 |
2SA78 |
High-Speed Switching Transistor |
TOSHIBA |
| 556 |
2SB1108 |
Medium Speed Switching Complementary Pair with 2SD1608 |
Panasonic |
| 557 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 558 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 559 |
2SB1142 |
PNP Epitaxial Planar Silicon Transistors 50V/2.5A High-Speed Switching Applications |
SANYO |
| 560 |
2SB1285 |
Low-speed switching Darlington transistor |
Shindengen |
| 561 |
2SB1448 |
Low-speed switching Darlington transistor |
Shindengen |
| 562 |
2SB1468 |
PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications |
SANYO |
| 563 |
2SB150 |
Low-Speed Switching Transistor |
TOSHIBA |
| 564 |
2SB1578 |
Low freq. power amp., medium-speed switching transistor |
NEC |
| 565 |
2SB201 |
Low-Speed Switching Transistor |
TOSHIBA |
| 566 |
2SB265 |
Low-Speed Switching Transistor |
TOSHIBA |
| 567 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
| 568 |
2SB40 |
Low-Speed Switching Transistor |
TOSHIBA |
| 569 |
2SB424 |
Low-Speed Switching Transistor |
TOSHIBA |
| 570 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
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