| No. |
Part Name |
Description |
Manufacturer |
| 541 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 542 |
HV2405E |
World-Wide Single Chip Power Supply |
Harris Semiconductor |
| 543 |
HV3-2405E-5 |
World-Wide Single Chip Power Supply |
Harris Semiconductor |
| 544 |
HV3-2405E-9 |
World-Wide Single Chip Power Supply |
Harris Semiconductor |
| 545 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 546 |
IRF530 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 547 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
TRSYS |
| 548 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 549 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 550 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 551 |
IRF533 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 552 |
IRF540-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 553 |
IRF640-D |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 554 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 555 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 556 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 557 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
| 558 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 559 |
IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 560 |
IRF842 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 561 |
IRF843 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 562 |
IRFF110 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
| 563 |
IRFF113 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
| 564 |
JDH2S01T |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer |
TOSHIBA |
| 565 |
JDP2S01AFS |
DIODE Silicon Epitaxial PIN Type UHF~VHF Band RF Switch Applications |
TOSHIBA |
| 566 |
JDP2S01E |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 567 |
JDP2S01S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 568 |
JDP2S01T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 569 |
JDP2S01U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 570 |
JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
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