| No. |
Part Name |
Description |
Manufacturer |
| 541 |
2CK48A |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 542 |
2CK48B |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 543 |
2N1204 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 544 |
2N1204A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 545 |
2N1420 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 546 |
2N1494 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 547 |
2N1494A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 548 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 549 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 550 |
2N1613 |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 551 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 552 |
2N1613 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 553 |
2N1613A |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 554 |
2N1711 |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 555 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 556 |
2N1711 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 557 |
2N1711 |
EPITAXIAL PLANAR NPN |
ST Microelectronics |
| 558 |
2N1711A |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 559 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 560 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 561 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 562 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 563 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 564 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 565 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 566 |
2N2102 |
EPITAXIAL PLANAR NPN |
ST Microelectronics |
| 567 |
2N2193 |
Silicon NPN planar epitaxial transistor for high speed switchings and RF amplifiers |
AEG-TELEFUNKEN |
| 568 |
2N2193 |
Silicon NPN Planar-Epitaxial HF and Switching Transistor |
TELEFUNKEN |
| 569 |
2N2193A |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 570 |
2N2196 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
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