No. |
Part Name |
Description |
Manufacturer |
541 |
GES5817 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
542 |
GES5818 |
Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. |
General Electric Solid State |
543 |
GES5819 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
544 |
GES6027 |
PROGRAMMABLE UNIJUNCTION TRANSISTOR |
General Electric Solid State |
545 |
GES6028 |
PROGRAMMABLE UNIJUNCTION TRANSISTOR |
General Electric Solid State |
546 |
GET4870 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
547 |
GET4871 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
548 |
H11A5100 |
H11A520 H11A550 H11A5100 |
General Electric Solid State |
549 |
H11A520 |
H11A520 H11A550 H11A5100 |
General Electric Solid State |
550 |
H11A550 |
H11A520 H11A550 H11A5100 |
General Electric Solid State |
551 |
H11B255 |
Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. |
General Electric Solid State |
552 |
H23A1 |
MATCHED EMITTED DETECTOR |
General Electric Solid State |
553 |
H23A2 |
MATCHED EMITTED DETECTOR |
General Electric Solid State |
554 |
H23B1 |
MATCHED EMITTER DETECTOR PAIR |
General Electric Solid State |
555 |
H23L1 |
Matched Emitter-Detector Pair H23L1 |
General Electric Solid State |
556 |
H74A1 |
PHOTON COUPLED ISOLATOR |
General Electric Solid State |
557 |
ICL7605 |
High Reliability Commutating Auto-Zero Instrumentaion Amplifier |
General Electric Solid State |
558 |
ICL8007 |
High Reliability JFET Input Operational Amplifier |
General Electric Solid State |
559 |
ICL8022 |
(ICL8021/ICL8023) Low Power Bipolar Operational Amplifier |
General Electric Solid State |
560 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
561 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
562 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
563 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
564 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
565 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
566 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
567 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
568 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
569 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
570 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
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