No. |
Part Name |
Description |
Manufacturer |
541 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
542 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
543 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
544 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
545 |
2N6188 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
546 |
2N6189 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
547 |
2N6192 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
548 |
2N6193 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
549 |
2N6211 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
550 |
2N6212 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
551 |
2N6213 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
552 |
2N6214 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
553 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
554 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
555 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
556 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
557 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
558 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
559 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
560 |
2N6254 |
High-power silicon N-P-N transistor. 100V, 150W. |
General Electric Solid State |
561 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
562 |
2N6262 |
High voltage silicon N-P-N transistor. 170V, 150W. |
General Electric Solid State |
563 |
2N6263 |
Medium power silicon N-P-N transistor. 140V, 20W. |
General Electric Solid State |
564 |
2N6264 |
Medium power silicon N-P-N transistor. 170V, 50W. |
General Electric Solid State |
565 |
2N6265 |
2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
566 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
567 |
2N6266 |
5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor |
RCA Solid State |
568 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
569 |
2N6267 |
10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
570 |
2N6268 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
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