| No. |
Part Name |
Description |
Manufacturer |
| 541 |
1SS400G |
Switching Diode |
ROHM |
| 542 |
1SS400GFH |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 543 |
1SS400GFHT2R |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 544 |
1SS400GT2R |
Switching Diode |
ROHM |
| 545 |
1SS400SM |
Switching Diode |
ROHM |
| 546 |
1SS400SMFH |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 547 |
1SS400SMFHT2R |
Switching Diode (corresponds to AEC-Q101) |
ROHM |
| 548 |
1SS400SMT2R |
Switching Diode |
ROHM |
| 549 |
1SS400T1 |
High Speed Switching Diode |
ON Semiconductor |
| 550 |
1SS404 |
SWITCHING DIODES |
Micro Commercial Components |
| 551 |
1SS412 |
Switching diode |
TOSHIBA |
| 552 |
1SS426 |
Switching diode |
TOSHIBA |
| 553 |
1SS427 |
Switching diode |
TOSHIBA |
| 554 |
1SS92 |
(1SS93/1SS94) Silicon Epitaxial Planar Ultra-High Speed Switching Diodes |
ROHM |
| 555 |
2505 |
512 AND 1024-BIT recirculating dynamic shift registers |
Signetics |
| 556 |
2505K |
512 AND 1024-BIT recirculating dynamic shift registers |
Signetics |
| 557 |
2512 |
512 AND 1024-BIT recirculating dynamic shift registers |
Signetics |
| 558 |
2512K |
512 AND 1024-BIT recirculating dynamic shift registers |
Signetics |
| 559 |
2524 |
512 and 1024 BIT recirculating dynamic shift registers |
Signetics |
| 560 |
2524V |
512 and 1024 BIT recirculating dynamic shift registers |
Signetics |
| 561 |
2525 |
512 and 1024 BIT recirculating dynamic shift registers |
Signetics |
| 562 |
2525V |
512 and 1024 BIT recirculating dynamic shift registers |
Signetics |
| 563 |
2CK120 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 564 |
2CK48 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 565 |
2CK48A |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 566 |
2CK48B |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 567 |
2N4957 |
Application Note - UHF amplifier design using data sheet design curves |
Motorola |
| 568 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
| 569 |
2SA1714 |
PNP high-speed switching darlington transistor |
NEC |
| 570 |
2SA1720 |
PNP high-speed switching darlington transistor |
NEC |
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